Package power delivery using plane and shaped vias

ABSTRACT

Embodiments of the invention include an electrical package and methods of forming the package. In one embodiment, the electrical package may include a first package layer. A plurality of signal lines with a first thickness may be formed on the first package layer. Additionally, a power plane with a second thickness may be formed on the first package layer. According to an embodiment, the second thickness is greater than the first thickness. Embodiments of the invention may form the power plane with a lithographic patterning and deposition process that is different than the lithographic patterning and deposition process used to form the plurality of signal lines. In an embodiment, the power plane may be formed concurrently with vias that electrically couple the signal lines to the next routing layer.

CROSS-REFERENCE TO RELATED APPLICATION

This patent application a continuation of U.S. patent application Ser.No. 15/776,755 filed May 16, 2018, which is a U.S. National PhaseApplication under 35 U.S.C. § 371 of International Application No.PCT/US2015/066186, filed Dec. 16, 2015, entitled “IMPROVED PACKAGE POWERDELIVERY USING PLANE AND SHAPED VIAS,” which designates the UnitedStates of America, the entire disclosure of which is hereby incorporatedby reference in its entirety and for all purposes.

FIELD OF THE INVENTION

Embodiments of the present invention relate generally to the manufactureof semiconductor devices. In particular, embodiments of the presentinvention relate to signal lines and power planes that are formed in thesame routing layer of a semiconductor package and have differentthicknesses and methods for manufacturing such devices.

BACKGROUND OF THE INVENTION

The drive to reduce the overall thickness and increase the routingdensity in electronic packaging has necessitated that the line widthsand spacing between copper lines be reduced. In order to obtain thereduced line widths and spacing, the thicknesses of the copper linesmust also be reduced. A drawback to reducing the thickness of copperlines is that the path resistance (R_(path)) is increased. Maintaining alow R_(path) is particularly important in the design of power deliverynetworks within the package.

Ideally, the power planes in the power delivery network are designedwith a minimum resistance and inductance. These parameters may beminimized by increasing the thickness of the power plane. However, sincethe copper lines and the power plane are formed with the same patterningand metal deposition processes, thicker metal in the power planerequires the thickness of the copper lines used for signal routing to beincreased as well. Accordingly, when a thicker power plane is used, thesignal routing lines in the layer require larger minimum line widths andspacings. The increased line width and spacing affects signal routingdensity and therefore, requires an increase in the number of layers ofthe package. Increasing the number of layers increases the overallthickness of the package and increases the cost of the package.

Thus, improvements are needed in the area of electronic packagingfabrication in order to form different metal thickness within a singlelayer in order to provide thick metal for the power plane routing andthin metal for the signal routing.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view of a package substrate that includes apower plane and signal lines that have substantially the same thickness.

FIG. 2 is a perspective view of a package substrate that includes signallines that have a first thickness that is less than a second thicknessof the power plane, according to an embodiment of the invention.

FIG. 3A is a plan view and a corresponding cross-sectional illustrationof a package substrate with a dielectric layer that has a seed layerformed over the surface, according to an embodiment of the invention.

FIG. 3B is a plan view and a corresponding cross-sectional illustrationof the package substrate after signal lines and via pads are formed overa surface of the substrate, according to an embodiment of the invention.

FIG. 3C is a plan view and a corresponding cross-sectional illustrationof the package substrate after a second photoresist material has beendeposited and patterned to form via openings and power plane openings,according to an embodiment of the invention.

FIG. 3D is a plan view and a corresponding cross-sectional illustrationof the package substrate after the vias and the power plane are formedin the openings in the second photoresist material, according to anembodiment of the invention.

FIG. 3E is a plan view and a corresponding cross-sectional illustrationof the package after the second photoresist material and the exposedportions of the seed layer have been removed, according to an embodimentof the invention.

FIG. 3F is a plan view and a corresponding cross-sectional illustrationof the package after a second dielectric layer has been formed over thesurface, according to an embodiment of the invention.

FIG. 4A is a plan view and a corresponding cross-sectional illustrationof a package substrate after signal lines and via pads are formed over asurface of the substrate, according to an embodiment of the invention

FIG. 4B is a plan view and a corresponding cross-sectional illustrationof the package substrate after a second dielectric layer is formed overthe signal lines and via pads, according to an embodiment of theinvention.

FIG. 4C is a plan view and a corresponding cross-sectional illustrationof the package substrate after a second photoresist material has beendeposited and patterned to form via openings and power plane openings,according to an embodiment of the invention.

FIG. 4D is a plan view and a corresponding cross-sectional illustrationof the package substrate after the via openings and the power planeopenings are transferred into the second dielectric layer, according toan embodiment of the invention.

FIG. 4E is a plan view and a corresponding cross-sectional illustrationof the package after the vias and the power plane are formed in theopenings in the second dielectric layer, according to an embodiment ofthe invention.

FIG. 4F is a plan view and a corresponding cross-sectional illustrationof the package after a third dielectric layer has been formed over thesurface, according to an embodiment of the invention.

FIG. 5 is a schematic of a computing device built in accordance with anembodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

Described herein are systems that include a semiconductor package andmethods of forming such semiconductor packages. In the followingdescription, various aspects of the illustrative implementations will bedescribed using terms commonly employed by those skilled in the art toconvey the substance of their work to others skilled in the art.However, it will be apparent to those skilled in the art that thepresent invention may be practiced with only some of the describedaspects. For purposes of explanation, specific numbers, materials andconfigurations are set forth in order to provide a thoroughunderstanding of the illustrative implementations. However, it will beapparent to one skilled in the art that the present invention may bepracticed without the specific details. In other instances, well-knownfeatures are omitted or simplified in order not to obscure theillustrative implementations.

Various operations will be described as multiple discrete operations, inturn, in a manner that is most helpful in understanding the presentinvention, however, the order of description should not be construed toimply that these operations are necessarily order dependent. Inparticular, these operations need not be performed in the order ofpresentation.

As described above, in current packaging technologies the signal linesand the power plane in a routing layer are formed with the same metaldeposition process. Accordingly, the thickness of the signal lines andthe thickness of the power plane are the same. FIG. 1 is a perspectiveview of a layer in an interconnect package 100 that includes a powerplane 140 and signal lines 130. The substrate on which power plane 140and the signal lines 130 are formed is omitted for simplicity. Asillustrated, the signal lines 130 have a first thickness T₁, and thepower plane 140 has a second thickness T₂. Since the power plane 140 andthe signal lines 130 are formed with the same metal depositionprocesses, T₁ and T₂ are substantially equal to each other. Accordingly,the design of the package 100 must include trade-offs between routingdensity of the signal lines 130 and path resistance R_(path) in thepower plane 140.

In contrast, embodiments of the present invention decouple thethicknesses of the signal lines and the power plane. Accordingly, thethickness of the power plane may be larger than the thickness of thesignal lines. FIG. 2 is a perspective view of a layer in a package 200according to such an embodiment. In the illustrated embodiment, thethickness T₂ of the power plane 240 is greater than the thickness T₁ ofthe signal lines 230. The ability to vary the thickness of differentconductive features within a single layer allows for critical parametersof both types of features to be optimized. For example, increasing thethickness T₂ of the power plane 240 allows for the R_(path) of the powerplane 240 to be minimized while still allowing for fine line and spacedesign rules for the signal lines 230.

Embodiments of the invention include processes for decoupling thethicknesses of the power plane and the signal lines without requiringadditional processing operations (e.g., extra exposure masks anddeposition processes may not be needed). Instead of requiring apatterning and deposition process that only forms the power plane,embodiments of the invention include processing operations that allowfor the vias to be formed concurrently with the formation of the powerplane. Accordingly, processing operations that are already needed toform the vias may also be used to form a power plane.

Embodiments of the invention are able to utilize the via formationprocess operations to also form the power plane, because the vias areformed with a lithographic patterning operation instead of a laserdrilling process that is used in current packaging technologies. Sincethe via openings are defined with a lithographic process, thelithographic mask can be altered to also include the openings for thepower plane. In addition to using the lithographic patterning process tocombine the formation of the power plane and the vias, the lithographicpatterning process allows for a reduction in the line width and spacingof the signal lines. Laser drilling is limited by the minimum featuresize and the misalignment of the laser when drilling the via opening.For example, the minimum feature size of a laser drilled via opening maybe approximately 40 μm or larger when a CO₂ laser is used, and themisalignment between the layers may be approximately +/−15 μm or larger.As such, the via pad sizes may need to be approximately 70 μm (i.e.,40+2(15) μm) or larger. Accordingly, the use of lithographicallypatterned via openings allows for smaller minimum feature sizes andreductions in misalignment. This allows for the via pads to be smaller,thereby increasing the routing density.

A process that enables the thicknesses of the power plane and the signallines to be decoupled from each other is described with respect to FIGS.3A-3F. The improved patterning and deposition processes, such as theones described herein, allow for the signal lines to have a firstthickness that is smaller than a second thickness of the power plane. Assuch, embodiments of the invention provide a package that is optimizedto have a power plane with a low R_(path) and signal lines with reducedline width and spacing requirements.

Referring now to FIGS. 3A, a plan view and a correspondingcross-sectional view of a package 300 are illustrated, according to anembodiment of the invention. The package 300 may include a dielectriclayer 305 that has a seed layer 335 formed over the top surface. By wayof example, the dielectric layer 305 may be a polymer material, such as,for example, polyimide, epoxy, or build-up film (BF). In an embodiment,the dielectric layer 305 may be one layer in a stack that includes aplurality of dielectric layers used to form a build-up structure. Assuch, the dielectric layer 305 may be formed over another dielectriclayer. Additional embodiments may include forming the dielectric layer305 as the first dielectric layer over a core material on which thestack is formed. In an embodiment, the seed layer 335 may be a copperseed layer. According to an additional embodiment, the substrate 305 maybe the bottommost layer of a package, and be a metallic material. Insuch embodiments, the seed layer 335 may be omitted.

Referring now to FIG. 3B, a photoresist material 385 may be formed overthe seed layer 335 and patterned to provide openings for the formationof one or more signal lines 330 and via pads 332. According to anembodiment, the patterning of the photoresist material 385 may beimplemented with lithographic processes (e.g., exposed with a radiationsource through a mask (not shown) and developed with a developer). Afterthe photoresist material 385 has been patterned, the signal lines 330and the via pads 332 may be formed. In an embodiment, the signal lines330 and the via pads 332 may be formed with an electroplating process orthe like.

As illustrated, the signal lines 330 and the via pads 332 may be formedto a first thickness T₁. The thickness T₁ of the signal lines 330 andthe via pads 332 may be a thickness that allows for the desired linewidth and spacing between neighboring lines. It is to be appreciatedthat neighboring signal lines 330 are not illustrated in the Figures inorder to not unnecessarily obscure embodiments of the invention.Embodiments of the invention include a first thickness T₁ for the signallines 330 and via pads 332 that is less than a second thickness T₂ of asubsequently formed power plane. For example, the thickness T₁ may beapproximately 20 μm or less. In a particular embodiment, the thicknessT₁ may be approximately 10 μm or less. Since lithographically definedvia openings may be used according to embodiments of the invention, thediameter of the via pads 332 may be smaller than would otherwise beneeded when the via openings are formed with a laser drilling process.When the use of via pads 332 that can be formed with a reduced diameterare combined with thin metal thicknesses T₁, embodiments of theinvention allow for an increased routing density.

Referring now to FIG. 3C, the first photoresist material 385 isstripped, and a second photoresist material 386 is deposited over thesignal lines 330 and the via pads 332. Via openings 319 and power planeopenings 342 may then be patterned into the second photoresist material386 by exposing the second photoresist material 386 to radiation througha mask (not shown) and developing with a developer. Patterning thesecond photoresist material 386 exposes the seed layer 335 in portionsof the package substrate 300 and also exposes a portion of the via pads332.

Referring now to FIG. 3D, a second metal deposition process is used todeposit a conductive material to form the vias 320 and the power plane340. According to an embodiment, the deposition process may be anysuitable deposition process, such as electroplating or the like. Asillustrated, the power plane 340 may be formed to a second thickness T₂that is different than the first thickness T₁ since the signal lines 330are protected from further deposition by the second photoresist material386. According to an embodiment, the second thickness T₂ may be anydesired thickness to provide a desired R_(path) for the power plane. Forexample, when the thickness T₂ is doubled the path resistance R_(path)is reduced in half. In an embodiment, the thickness T₂ may beapproximately 10 μm or greater. In one embodiment, the thickness T₂ maybe approximately 20 μm or greater. Additional embodiments may alsoinclude a second thickness T₂ that is up to or greater than thethickness of the dielectric layer formed over the signal lines 330 in asubsequent processing operation. In such an embodiment, the power plane340 may be formed through two or more routing layers by repeating theprocess described herein for each layer. While the power plane 340illustrated in FIG. 3D is a single continuous pad, it is to beappreciated that the second photoresist material 386 may be patterned toinclude a plurality of power plane pads, similar to the power plane 240illustrated in FIG. 2.

The vias 320 provide a conductive path from the signal lines 330 thatallows the signal lines 330 to be electrically coupled to a subsequentlyformed layer in the package 300. While the vias 320 are illustrated asbeing substantially circular and located only over the via pads 332, itis to be appreciated that the shape of the vias 320 are not limited tosuch configurations. For example, the vias may be elongated (i.e., linevias) that extend along portions of (or the entire length of) the signallines 330. Additionally, since the vias 320 are being deposited over thevia pads 332, they may include a top surface that is higher than the topsurface of the power plane 340.

Referring now to FIG. 3E, the second photoresist material 386 isstripped and the exposed portions of the seed layer 335 are removed.According to an embodiment, the seed layer 335 may be removed with aseed etching process. After the seed layer 335 is removed, the powerplane 340 is electrically isolated from the signal lines 330 and the viapads 332.

Referring now to FIG. 3F, a second dielectric layer 306 is formed overthe exposed power plane 340, vias 320, signal lines 330, and via pads332. According to an embodiment the second dielectric layer 306 may beformed with any suitable process, such as lamination or slit coating andcuring. In an embodiment, the second dielectric layer 306 is formed to athickness that will completely cover a top surface of the vias 320. Asopposed to layer formation on crystalline structures (e.g., siliconsubstrates), each of the dielectric layers may not be highly uniform.Accordingly, the second dielectric layer 306 may be formed to athickness that is greater than the combined height of the vias 320 andthe via pads 332 to ensure that the proper thickness is reached acrossthe entire substrate. When the second dielectric is formed above thevias 320, a controlled etching process may then be used to expose thetop surface of the vias 320, as illustrated in FIG. 3F.

In an embodiment, the dielectric removal process may include a wet etch,a dry etch (e.g., a plasma etch), a wet blast, or a laser ablation(e.g., by using excimer laser). According to an additional embodiment,the depth controlled dielectric removal process may be performed onlyproximate to the vias 320. For example, laser ablation of the seconddielectric layer 306 may be localized proximate to the location of thevia 320. In some embodiments, the thickness of the second dielectriclayer 306 may be minimized in order to reduce the etching time requiredto expose the line via 320. In other embodiments, when the thickness ofthe dielectric can be well controlled, the vias 320 may extend above thetop surface of the second dielectric layer 306 and the controlleddielectric removal process may be omitted.

Furthermore, it is to be appreciated that the top surface of the powerplane 340 is covered by the second dielectric layer 306 in someembodiments. As such, the subsequently formed signal lines on the nextlayer may be formed directly above portions of the power plane 340. Inadditional embodiments where the power plane 340 is extended into thenext routing layer, the second dielectric layer 306 may be recessed toexpose a top portion of the power plane 340 in addition to exposing atop portion of the vias 320.

According to an embodiment of the invention, alternative processes mayalso be used for forming a power plane with a thickness that is greaterthan the thickness of the signal lines. Instead forming the power planeand the vias prior to depositing the second dielectric layer,embodiments of the invention may also utilize a process where the seconddielectric layer is deposited prior to forming the power plane and thevias. Such an embodiment is described in detail with respect to FIGS.4A-4F.

Referring now to FIG. 4A, a plan view and a correspondingcross-sectional view of a package 400 are illustrated, according to anembodiment of the invention. The package 400 may include a dielectriclayer 405 that has a seed layer 435 formed over the top surface.According to an embodiment, the seed layer 435 and the dielectric layer405 may be substantially similar to the seed layer 335 and dielectriclayer 305 described above.

In FIG. 4A a photoresist material 485 is formed over the seed layer 435and patterned to provide openings for the formation of one or moresignal lines 430 and via pads 432. According to an embodiment, thepatterning of the photoresist material 485 may be implemented withlithographic processes (e.g., exposed with a radiation source through amask (not shown) and developed with a developer). After the photoresistmaterial 485 has been patterned, the signal lines 430 and the via pads432 may be formed. In an embodiment, the signal lines 430 and the viapads 432 may be formed with an electroplating process or the like.

As illustrated, the signal lines 430 and the via pads 432 may be formedto a first thickness T₁. The thickness T₁ of the signal lines 430 andthe via pads 432 may be a thickness that allows for the desired linewidth and spacing between neighboring lines. It is to be appreciatedthat neighboring signal lines 430 are not illustrated in the Figures inorder to not unnecessarily obscure embodiments of the invention.Embodiments of the invention include a first thickness T₁ for the signallines 430 and via pads 432 that is less than a second thickness T₂ of asubsequently formed power plane. For example, the thickness T₁ may beapproximately 20 μm or less. In a particular embodiment, the thicknessT₁ may be approximately 10 μm or less. Since lithographically definedvia openings may be used according to embodiments of the invention, thediameter of the via pads 432 may be smaller than would otherwise beneeded when the via openings are formed with a laser drilling process.When the use of via pads 432 that can be formed with a reduced diameterare combined with thin metal thicknesses T₁, embodiments of theinvention allow for an increased routing density.

Referring now to FIG. 4B, the first photoresist material 485 is strippeda second dielectric layer 406 is formed over the signal lines 430 andvia pads 432. In some embodiments, the portions of the seed layer 435that were covered by the first photoresist material 485 may also beremoved prior to forming the second dielectric layer 406. The seed layer435 may be removed with a seed etching process. According to anembodiment, the second dielectric layer 406 may be formed with anysuitable process, such as lamination or slit coating and curing.

Referring now to FIG. 4C, embodiments of the invention includedepositing a second photoresist material 486 over the second dielectriclayer 406. According to an embodiment, the second photoresist material486 may then be patterned to form via openings 419 and power planeopenings 442. In some embodiments, the second photoresist material 486may be opaque. In such embodiments, an alignment mark (not shown) belowthe second photoresist material 486 may be revealed with a laserdrilling process. After the alignment mark is revealed, a mask (notshown) may be aligned with the alignment mark and used to pattern thevia openings 419 and the power plane openings 442 into the secondphotoresist material 486.

Referring now to FIG. 4D, the second dielectric layer 406 is patternedusing the second photoresist material 486 as a mask in order to transferthe via openings 419 and the power plane openings 442 into the seconddielectric layer 406. Embodiments of the invention include ananisotropic etching process that provides substantially verticalsidewalls for the openings in the second dielectric layer 406. Forexample, the second dielectric layer 406 may be etched with a dryetching process, such as a plasma etch. The dry etching process may alsoetch the second photoresist material 486. Accordingly, embodiments ofthe invention include a second photoresist material 486 that has athickness that allows for a portion to be removed while stillmaintaining an etch mask for the second dielectric layer 406.Alternative embodiments may also include a hardmask layer (not shown)formed between the second photoresist material 486 and the seconddielectric layer 406. In such an embodiment, the via openings and thepower plane openings may be patterned into the hardmask layer, which canthen be used as a mask for etching the pattern into the seconddielectric layer. As such, the photoresist material 486 does not have tohave a high etch selectivity with respect to the second dielectric layer406.

Referring now to FIG. 4E, the power plane 440 and the vias 420 may beformed in the openings formed in the second dielectric layer 406. In anembodiment, a seed layer (not shown) may be formed first, followed by ametal deposition process. For example, the metal deposition process maybe an electroplating process or the like. As illustrated, the powerplane 440 may be formed to a second thickness T₂ that is different thanthe first thickness T₁ since the signal lines 430 are protected fromfurther deposition by the second dielectric layer 406. According to anembodiment, the second thickness T₂ may be any desired thickness toprovide a desired R_(path) for the power plane. In an embodiment, thethickness T₂ may be approximately 10 μm or greater. In one embodiment,the thickness T₂ may be approximately 20 μm or greater. Additionalembodiments may also include a second thickness T₂ that is up to orgreater than the thickness of the second dielectric layer 406 formedover the signal lines 430. In such an embodiment, the power plane 440may be formed through two or more routing layers by repeating theprocess described herein for each layer. While the power plane 440illustrated in FIG. 4D is a single continuous pad, it is to beappreciated that the second dielectric layer 406 may be patterned toinclude a plurality of power plane pads, similar to the power plane 240illustrated in FIG. 2.

The vias 420 provide a conductive path from the signal lines 430 thatallows the signal lines 430 to be electrically coupled to a subsequentlyformed layer in the package 400. While the vias 420 are illustrated asbeing substantially circular and located only over the via pads 432, itis to be appreciated that the shape of the vias 420 are not limited tosuch configurations. For example, the vias may be elongated (i.e., linevias) that extend along portions of (or the entire length of) the signallines 430. Additionally, since the vias 420 are being deposited over thevia pads 432, they will include a top surface that is higher than thetop surface of the power plane 440.

Referring now to FIG. 4F, the remaining photoresist material 486 may bestripped and a third dielectric layer 407 may be formed over the topsurfaces of the power plane 440. According to an embodiment, the thirddielectric layer 407 may be formed with any suitable process, such aslamination or slit coating and curing. In an embodiment, the thirddielectric layer 407 is formed to a thickness that will completely covera top surface of the vias 420. As opposed to layer formation oncrystalline structures (e.g., silicon substrates), each of thedielectric layers may not be highly uniform. Accordingly, the thirddielectric layer 407 may be formed to a thickness that is greater thanthe combined height of the vias 420 and the via pads 432 to ensure thatthe proper thickness is reached across the entire substrate. When thethird dielectric layer 407 is formed above the vias 420, a controlledetching process may then be used to expose the top surface of the vias420, as illustrated in FIG. 4F.

In an embodiment, the dielectric removal process may include a wet etch,a dry etch (e.g., a plasma etch), a wet blast, or a laser ablation(e.g., by using excimer laser). According to an additional embodiment,the depth controlled dielectric removal process may be performed onlyproximate to the vias 420. For example, laser ablation of the thirddielectric layer 407 may be localized proximate to the location of thevia 420. In some embodiments, the thickness of the third dielectriclayer 407 may be minimized in order to reduce the etching time requiredto expose the line via 420. In other embodiments, when the thickness ofthe dielectric can be well controlled, the vias 420 may extend above thetop surface of the third dielectric layer 407 and the controlleddielectric removal process may be omitted.

Furthermore, it is to be appreciated that the top surface of the powerplane 440 is covered by the third dielectric layer 407 in someembodiments. As such, the subsequently formed signal lines on the nextlayer may be formed directly above portions of the power plane 440. Inadditional embodiments where the power plane 440 is extended into thenext routing layer, the third dielectric layer 407 may be omitted andthe next routing layer may be formed over the second dielectric layer406.

FIG. 5 illustrates a computing device 500 in accordance with oneimplementation of the invention. The computing device 500 houses a board502. The board 502 may include a number of components, including but notlimited to a processor 504 and at least one communication chip 506. Theprocessor 504 is physically and electrically coupled to the board 502.In some implementations the at least one communication chip 506 is alsophysically and electrically coupled to the board 502. In furtherimplementations, the communication chip 506 is part of the processor504.

Depending on its applications, computing device 500 may include othercomponents that may or may not be physically and electrically coupled tothe board 502. These other components include, but are not limited to,volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flashmemory, a graphics processor, a digital signal processor, a cryptoprocessor, a chipset, an antenna, a display, a touchscreen display, atouchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, anaccelerometer, a gyroscope, a speaker, a camera, and a mass storagedevice (such as hard disk drive, compact disk (CD), digital versatiledisk (DVD), and so forth).

The communication chip 506 enables wireless communications for thetransfer of data to and from the computing device 500. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 506 may implement anyof a number of wireless standards or protocols, including but notlimited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE,GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well asany other wireless protocols that are designated as 3G, 4G, 5G, andbeyond. The computing device 500 may include a plurality ofcommunication chips 506. For instance, a first communication chip 506may be dedicated to shorter range wireless communications such as Wi-Fiand Bluetooth and a second communication chip 506 may be dedicated tolonger range wireless communications such as GPS, EDGE, GPRS, CDMA,WiMAX, LTE, Ev-DO, and others.

The processor 504 of the computing device 500 includes an integratedcircuit die packaged within the processor 504. In some implementationsof the invention, the integrated circuit die of the processor includesone or more devices, such as devices that include signal lines and powerplanes that are formed in the same routing layer of a semiconductorpackage and have different thicknesses, in accordance withimplementations of the invention. The term “processor” may refer to anydevice or portion of a device that processes electronic data fromregisters and/or memory to transform that electronic data into otherelectronic data that may be stored in registers and/or memory.

The communication chip 506 also includes an integrated circuit diepackaged within the communication chip 506. In accordance with anotherimplementation of the invention, the integrated circuit die of thecommunication chip includes one or more devices, such as devices thatinclude signal lines and power planes that are formed in the samerouting layer of a semiconductor package and have different thicknesses,in accordance with implementations of the invention.

The above description of illustrated implementations of the invention,including what is described in the Abstract, is not intended to beexhaustive or to limit the invention to the precise forms disclosed.While specific implementations of, and examples for, the invention aredescribed herein for illustrative purposes, various equivalentmodifications are possible within the scope of the invention, as thoseskilled in the relevant art will recognize.

These modifications may be made to the invention in light of the abovedetailed description. The terms used in the following claims should notbe construed to limit the invention to the specific implementationsdisclosed in the specification and the claims. Rather, the scope of theinvention is to be determined entirely by the following claims, whichare to be construed in accordance with established doctrines of claiminterpretation.

Embodiments of the invention include an electrical package comprising: afirst package layer; a plurality of signal lines with a first thicknessformed on the first package layer; and a power plane with a secondthickness formed on the first package layer, wherein the secondthickness is greater than the first thickness.

Additional embodiments of the invention include an electrical package,further comprising: a dielectric layer formed over the plurality ofsignal lines and the power plane.

Additional embodiments of the invention include an electrical package,further comprising: one or more vias electrically coupled to one or moreof the signal lines, wherein the one or more vias extend through thedielectric layer.

Additional embodiments of the invention include an electrical package,wherein the vias are electrically coupled to signal lines by a via padformed on the first package layer.

Additional embodiments of the invention include an electrical package,wherein top surfaces of the one or more vias is above a top surface ofthe power plane.

Additional embodiments of the invention include an electrical package,wherein the power plane extends above the first dielectric layer.

Additional embodiments of the invention include an electrical package,wherein the first thickness is approximately 10 μm or less and thesecond thickness is greater than approximately 10 μm.

Additional embodiments of the invention include an electrical package,wherein a minimum spacing between signal lines is less than a minimumspacing between the power plane and any of the signal lines.

Embodiments of the invention include a method of forming an electricalpackage, comprising: forming a plurality of signal lines with a firstthickness over a first package substrate; depositing a photoresist layerover the first package substrate and the plurality of signal lines;patterning the photoresist layer to form a power plane opening throughthe photoresist layer, wherein the photoresist layer remains over theplurality of signal lines; depositing a conductive material into thepower plane opening to form a power plane on the first packagesubstrate, wherein the power plane has a second thickness that isgreater than the first thickness; removing the photoresist layer; andforming a second dielectric layer over the first package substrate, thepower plane, and the plurality of signal lines.

Additional embodiments of the invention include a method of forming anelectrical package, wherein a conductive seed layer is formed over a topsurface of the first package substrate.

Additional embodiments of the invention include a method of forming anelectrical package, further comprising: removing portions of the seedlayer that are not covered by the power plane or the plurality of signallines after the photoresist material is removed.

Additional embodiments of the invention include a method of forming anelectrical package, further comprising forming one or more via pads overthe first package substrate that are each electrically coupled to one ofthe signal lines prior to depositing the photoresist layer.

Additional embodiments of the invention include a method of forming anelectrical package, further comprising: forming via openings through thephotoresist layer with the same processes used to form the power planeopenings; and forming vias in the via openings with the same processesused to form the power plane.

Additional embodiments of the invention include a method of forming anelectrical package, wherein the second dielectric layer is formed overabove a top surface of the vias.

Additional embodiments of the invention include a method of forming anelectrical package, further comprising: recessing the second dielectriclayer to expose the top surface of the vias, wherein the seconddielectric lay remains over a top surface of the power plane.

Additional embodiments of the invention include a method of forming anelectrical package, wherein the first thickness is approximately 10 μmor less and the second thickness is greater than 10 μm.

Embodiments of the invention include a method of forming an electronicpackage, comprising: forming a plurality of signal lines with a firstthickness over a first package substrate; depositing a dielectric layerover the first package substrate and the plurality of signal lines;depositing a photoresist layer over the dielectric layer; patterning thephotoresist layer to form a power plane opening through the photoresistlayer and the dielectric layer, wherein the dielectric layer remainsover the plurality of signal lines; depositing a conductive materialinto the power plane opening to form a power plane on the first packagesubstrate, wherein the power plane has a second thickness that isgreater than the first thickness; and removing the photoresist layer.

Additional embodiments of the invention include a method of forming anelectrical package, further comprising forming one or more via pads overthe first package substrate that are each electrically coupled to one ofthe signal lines prior to depositing the dielectric layer.

Additional embodiments of the invention include a method of forming anelectrical package, further comprising: forming via openings through thephotoresist layer and the dielectric layer with the same processes usedto form the power plane openings; and forming vias in the via openingswith the same processes used to form the power plane.

Additional embodiments of the invention include a method of forming anelectrical package, further comprising: forming a second dielectriclayer over the dielectric layer, the power plane, and the vias; andrecessing the second dielectric layer to expose a top surface of thevias.

Additional embodiments of the invention include a method of forming anelectrical package, wherein the first thickness is approximately 10 μmor less and the second thickness is greater than 10 μm.

Additional embodiments of the invention include a method of forming anelectrical package, further comprising: forming a hardmask layer betweenthe photoresist material and the dielectric layer; and patterning thephotoresist layer further includes forming a power plane opening throughthe hardmask layer.

Embodiments of the invention include an electrical package comprising: afirst package layer; a plurality of signal lines with a first thicknessformed on the first package layer; a plurality of via pads each coupledto one of the signal lines; a power plane with a second thickness formedon the first package layer, wherein the second thickness is greater thanthe first thickness; a dielectric layer formed over the first packagelayer; and a plurality of vias formed through the dielectric layer andin contact with one of the via pads.

Additional embodiments of the invention include an electrical package,wherein the first thickness is approximately 10 μm or less and thesecond thickness is greater than approximately 10 μm.

Additional embodiments of the invention include an electrical package,wherein the dielectric layer covers a top surface of the power plane.

What is claimed is:
 1. An electrical package comprising: a first packagelayer; a plurality of signal lines with a first thickness formed on thefirst package layer; and a power plane with a second thickness formed onthe first package layer, wherein the second thickness is greater thanthe first thickness, and wherein the power plane surrounds one or moreof the plurality of signal lines.
 2. The electrical package of claim 1,further comprising: a dielectric layer formed over the plurality ofsignal lines and the power plane.
 3. The electrical package of claim 2,further comprising: one or more vias electrically coupled to one or moreof the signal lines, wherein the one or more vias extend through thedielectric layer.
 4. The electrical package of claim 3, wherein the viasare electrically coupled to signal lines by a via pad formed on thefirst package layer.
 5. The electrical package of claim 3, wherein topsurfaces of the one or more vias is above a top surface of the powerplane.
 6. The electrical package of claim 2, wherein the power planeextends above the first dielectric layer.
 7. The electrical package ofclaim 1, wherein the first thickness is approximately 10 μm or less andthe second thickness is greater than approximately 10 μm.
 8. Theelectrical package of claim 1, wherein a minimum spacing between signallines is less than a minimum spacing between the power plane and any ofthe signal lines.
 9. The electrical package of claim 1, wherein the awidth of the power plane is substantially uniform through a thickness ofthe power plane.
 10. The electrical package of claim 1, whereinsidewalls of the power plane are substantially vertical.
 11. Anelectrical package comprising: a first package layer; a plurality ofsignal lines with a first thickness formed on the first package layer; apower plane with a second thickness formed on the first package layer,wherein the second thickness is greater than the first thickness; adielectric layer formed over the plurality of signal lines and the powerplane; and one or more vias electrically coupled to one or more of thesignal lines, wherein the one or more vias extend through the dielectriclayer.
 12. The electrical package of claim 11, wherein sidewalls of thepower plane are substantially vertical.
 13. The electrical package ofclaim 11, wherein a width of the power plane is substantially uniformthrough a thickness of the power plane.
 14. The electrical package ofclaim 11, wherein top surfaces of the one or more vias is above a topsurface of the power plane.
 15. The electrical package of claim 14,wherein the power plane extends above the first dielectric layer. 16.The electrical package of claim 11, wherein the first thickness isapproximately 10 μm or less and the second thickness is greater thanapproximately 10 μm.
 17. The electrical package of claim 11, wherein aminimum spacing between signal lines is less than a minimum spacingbetween the power plane and any of the signal lines.
 18. The electricalpackage of claim 17, wherein the power plane surrounds one or more ofthe plurality of signal lines.
 19. The electrical package of claim 11,wherein the vias are electrically coupled to signal lines by a via padformed on the first package layer.
 20. The electrical package of claim19, wherein a width of the via pad is greater than a width of the signallines.